Datasheet CS630A4H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS630A4H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 83 0.23 t	Huajing Microelectronics

CS630 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS630F	VDMOS transistor 华晶分立器件 CS630F CS630F 型 VDMOS 晶体管 1. 概述与特点 CS630F 型 VDMOS 晶体管，主要用于线性放大、功率开关。其特点如下： ● 开关速度快 ● 通态电阻低 ● 可并联使用 10.4max ● 驱动简单 ● 封装形式：TO-220F 15.5	ETC
CS630	Phase Control Thyristor Phase Control Thyristor V CS 630 ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 VRSM VDSM V 1200 1400 1600 V RRM V DRM V Type 1 2 2 4 3 3 4 1200 1400 1600 CS 630-12io1 CS 630-14io1 CS 630-16io1 1 Symbol ITRMS ITAVM I TSM Test Conditions TC = 85° C; 180° sine TVJ = 45	IXYS Corporation
CS630A4H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)T	Huajing Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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