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Datasheet CS6N60A3TY Equivalent ( PDF )

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1 CS6N60A3TY   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS6N60 A3TY ○R General Description： CS6N60 A3TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can
Huajing Microelectronics
Huajing Microelectronics		 datasheet CS6N60A3TY pdf

CS6N60A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS6N60A4H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS6N60 A4H ○R General Description： CS6N60 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The tr
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS6N60A4D

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS6N60 A4D ○R General Description： CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 95 1.0 perf
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS6N60A3HDY

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS6N60 A3HDY ○R General Description： CS6N60 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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SPS122

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