Datasheet CS6N60A4H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS6N60A4H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS6N60 A4H ○R General Description： CS6N60 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used	Huajing Microelectronics

CS6N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS6N60F	N-Channel MOSFET BRF6N60(CS6N60F) 用途: 用于高效 DC/DC 转换和功率开关 N-Channel MOSFET/N 沟 MOS 晶体管 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: DS 之间导通电阻小、低的门槛电压�	LZG
CS6N60F	VDMOS 华晶分立器件 CS6N60(F) CS6N60(F)型 VDMOS 晶体管 1.概述与特点 CS6N60(F)是 N 沟道 600V 系列 VDMOS 晶体管，主要用于电源适配器、充电器等各种功率开关电路。具有如下特点： ● 开关速度快 ● 通态电阻小 ● 可并联�	ETC
CS6N60	VDMOS 华晶分立器件 CS6N60(F) CS6N60(F)型 VDMOS 晶体管 1.概述与特点 CS6N60(F)是 N 沟道 600V 系列 VDMOS 晶体管，主要用于电源适配器、充电器等各种功率开关电路。具有如下特点： ● 开关速度快 ● 通态电阻小 ● 可并联�	ETC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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