Datasheet CS6N60FA9H-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS6N60FA9H-G	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS6N60F A9H-G ○R General Description： CS6N60F A9H-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor	Huajing Microelectronics

CS6N60FA9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS6N60FA9H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS6N60F A9H ○R General Description： CS6N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.	Huajing Microelectronics
CS6N60FA9TY	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS6N60F A9TY ○R General Description： CS6N60F A9TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy	Huajing Microelectronics
CS6N60FA9H-G	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS6N60F A9H-G ○R General Description： CS6N60F A9H-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche ener	Huajing Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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