Datasheet CS830A8RD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS830A8RD	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS830 A8RD ○R General Description： CS830 A8RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be	Huajing Microelectronics

CS830A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS830A4RD	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 5 75 1.25 per	Huajing Microelectronics
CS830A3RD	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS830 A3RD ○R General Description： CS830 A3RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th	Huajing Microelectronics
CS830A8RD	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS830 A8RD ○R General Description： CS830 A8RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th	Huajing Microelectronics

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