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Datasheet CYUSB2304 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CYUSB2304 | HX3 USB 3.0 Hub CYUSB330x/CYUSB331x CYUSB332x/CYUSB230x
HX3 USB 3.0 Hub
HX3 USB 3.0 Hub
General Description
HX3 is a family of USB 3.0 hub controllers compliant with the USB 3.0 specification revision 1.0. HX3 supports SuperSpeed (SS), Hi-Speed (HS), Full-Speed (FS), and Low-Speed (LS) on all the ports. It has in |  Cypress Semiconductor | data |
CYU Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CYU01M16SCCU | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16SCCU MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • 16-word Pag Cypress Semiconductor data | | |
| 2 | CYU01M16SCE | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16SCE MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic po Cypress Semiconductor data | | |
| 3 | CYU01M16SCG | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16SCG MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic po Cypress Semiconductor data | | |
| 4 | CYU01M16SFCU | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16SFCU MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18mA @ f = fmax • Ultra low standby power • 16-word Pag Cypress Semiconductor data | | |
| 5 | CYU01M16SFE | 16-Mbit (1M x 16) Pseudo Static RAM CYU01M16SFE MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic power-down whe Cypress Semiconductor data | | |
| 6 | CYU01M16ZCC | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16ZCC MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • 16-word Page Cypress Semiconductor data | | |
| 7 | CYU01M16ZFC | 16-Mbit (1M x 16) Pseudo Static RAM PRELIMINARY
CYU01M16ZFC MoBL3™
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • 16-word Pag Cypress Semiconductor data | |
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