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Datasheet D2060 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D2060 | NPN Transistor, 2SD2060 SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2060
DESCRIPTION www.dat·aWshiethet4TuO.co-2m20F package
·Complement to type 2SB1368 ·Low collector saturation voltage:
VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation:
PC=25W(TC=25 )
APPLICATIONS · |  SavantIC | data |
| 2 | D2060C | Standard Recovery Diode SEMICONDUCTOR
D2060C Series RRooHHSS
Nell High Power Products
Standard Recovery Diodes (Hockey PUK Version), 2060A
FEATURES
Wide current range High voltage ratings up to 2500 V High surge current capabilities Diffused junction Hockey PUK version Case style DO-200AB(B-PUK), Nell’s C-type Capsule |  nELL | diode |
| 3 | D2060D | Standard Recovery Diode SEMICONDUCTOR
D2060D Series RRooHHSS
Nell High Power Products
Standard Recovery Diodes (Hockey PUK Version), 2060A
FEATURES
Wide current range High voltage ratings up to 4500V High surge current capabilities Diffused junction Hockey PUK version Case style DO-220AC(K-PUK), Nell’s D-type Capsule L | nELL | diode |
D20 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D20 | Memory Micromodules General Information for D1/ D2 and C Packaging D10, D15, D20, D22, C20, C30 MICROMODULES
Memory Micromodules General Information for D1, D2 and C Packaging
s
Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte  STMicroelectronics data | | |
| 2 | D200 | SIP DC/DC Converters
D200 Series
Single & Dual Output Miniature, 2W SIP DC/DC Converters
Electrical Specifications
Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice.
Input
Key Features:
Paramet  uPD converter | | |
| 3 | D2001UK | METAL GATE RF SILICON FET TetraFET
D2001UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr  Seme LAB gate | | |
| 4 | D2002 | METAL GATE RF SILICON FET TetraFET
D2002UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss Seme LAB gate | | |
| 5 | D2002- | Stereo Headphone Amplifier w headphone equipment 3V use).
at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo
dual OCL power a mplifier, and a ripple filter.
STEREO aS HEADPHONE AMPLIFIER £¨
e e h
U 4 t
m o .c
Silicore
3V USE£©
Outline Drawing
D2002
It is built in dual auto -reverse prea mp lifie  Shaoxing Silicore Technology amplifier | | |
| 6 | D2002UK | METAL GATE RF SILICON FET TetraFET
D2002UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss Seme LAB gate | | |
| 7 | D2003 | METAL GATE RF SILICON FET TetraFET
D2003UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B H C 2 3 1 A D E 5 4 F G
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
J K
I
N
M
O
• SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BI Seme LAB gate | |
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