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Datasheet D256 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | D256 | NPN Transistor - 2SD256 |
 ETC |
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| 2 | D2560 | NPN Transistor - 2SD2560 Equivalent circuit
C
Darlington
2SD2560
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2560 100max 100max 150min 5000min∗ 2.5max 3.0max 70ty |
 Sanken electric |
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| 1 | D2562 | NPN Transistor - 2SD2562 INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (I |
 Inchange Semiconductor |
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