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Datasheet D882M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | D882M | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
D882M TRANSISTOR (NPN)
TO-252-2L
FEATURES Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Volt |
 JCET |
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| 2 | D882M | NPN Transistor 深圳市鹏爱半导体有限公司
SHENZHENPENGAI SEMICONDUCTOR CO.LTD
D882M 主要用途：
高频放大电路、应急灯、电动玩具控制电路。
主要特点：
硅外延平面工艺、输出特性好、电流容量大。
封装形式：
TO-126
TEL:0755-27656829 FAX:0755-23443106
NPN
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 SHENZHENPENGAI |
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| 1 | D882M-G | General Purpose Transistors General Purpose Transistors
D882M-G
RoHS Device
Features
- Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage.
Diagram
- 1. BASE - 2. COLLECTOR - 3. EMITTER
2
C
1
B
E
3
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbo |
 Comchip |
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