| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | DMT8012LK3 | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION DMT8012LK3 Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) max 17mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V ID max TC = +25°C 44A 38A Features Low RDS(ON) – ensures on state losses are minimized High Conversion Efficiency Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 |
 Diodes |
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| DMT8012LFG | N-CHANNEL ENHANCEMENT MODE MOSFET ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMT8012LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 80V RDS(ON) max 16mΩ @ VGS = 10V 22mΩ @ VGS = 6V ID max TC = +25°C 35A 30A Description and Applications This MOSFET has been designed to minimize the on-state |
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| DMT8012LPS | N-CHANNEL ENHANCEMENT MODE MOSFET DMT8012LPS Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary BVDSS 80V RDS(ON) 17mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID TC = +25°C 65A 59A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintai |
Diodes |
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| DMT8012LSS | N-CHANNEL ENHANCEMENT MODE MOSFET DMT8012LSS 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 16.5mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID Max TA = +25°C 9.7A 8.8A Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency |
Diodes |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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