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F2201 PDF Datasheet

The F2201 is Patented Gold Metalized SilICon Gate Enhancement Mode Rf Power Vdmos. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 F2201
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performa

Polyfet RF Devices
Polyfet RF Devices
pdf

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Recommended search results related to F2201

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FPF2201   Integrated Load Switch

FPF2200-FPF2202 Integrated Load Switch with 500mA High Precision Current Limit June 2008 FPF2200-FPF2202 Integrated Load Switch with 500mA High Precision Current Limit Features 1.8 to 5.5V Input Voltage Range Typical RDS(ON) = 140m @ VIN = 5.5V Typical RDS(ON) = 160m @ VIN = 3

Fairchild Semiconductor
Fairchild Semiconductor
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MCMF0W4FF2201A50   Metal Film Fixed Resistor

Metal Film Fixed Resistor Specifications: Type Rated Power Max. Working Voltage Max. Overload Voltage Dielectric Withstanding Voltage Rated Ambient Temp Operating Temp. Range Resistance Tolerance Resistance Range : MCMF : 0.25W at 70°C : 250V : 500V : 500V : 70°C : -5

Multicomp
Multicomp
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MMBF2201N   Power MOSFET ( Transistor )

MMBF2201N, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are d

ON Semiconductor
ON Semiconductor
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MMBF2201NT1   N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBF2201NT1/D MMBF2201NT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits.

Motorola Semiconductors
Motorola Semiconductors
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MMBF2201NT1   Power MOSFET ( Transistor )

MMBF2201NT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitr

ON Semiconductor
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