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Datasheet F30U60DN Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | F30U60DN | FFAF30U60DN FFAF30U60DN
FFAF30U60DN
Features
• High voltage and high reliability • High speed switching • Low forward voltage
Applications
• • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits TO-3PF
1 2 3
1. Anode 2.Cathode 3. An | Fairchild Semiconductor | data |
F30 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | F30 | Diode Switching 3KV 0.35A 2-Pin Case G-66 New Jersey Semiconductor diode | | |
2 | F3002 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
3 | F3003 | Tube CSF data | | |
4 | F301 | Diode, Rectifier American Microsemiconductor diode | | |
5 | F3027 | Tube CSF data | | |
6 | F30D05 | POWER RECTIFIERS(30A/50-200V) Mospec Semiconductor rectifier | | |
7 | F30D10 | POWER RECTIFIERS(30A/50-200V) Mospec Semiconductor rectifier | |
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Número de pieza | Descripción | Fabricantes | |
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