Datasheet FDD6N50F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDD6N50F	MOSFET ( Transistor ) FDD6N50F — N-Channel UniFETTM FRFET® MOSFET FDD6N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 5.5 A, 1.15 Ω November 2013 Features • RDS(on) = 950 mΩ (Typ.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 15nC) • Low Crss (Typ. 6.3pF) • 100% Avalanche Tested • Improved dv/dt Capa	Fairchild Semiconductor

FDD6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDD6N25	N-Channel MOSFET FDD6N25 / FDU6N25 250V N-Channel MOSFET February 2007 FDD6N25 / FDU6N25 250V N-Channel MOSFET Features • 4.4A, 250V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt	Fairchild Semiconductor
FDD6N50	N-Channel MOSFET FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features • RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 12.8 nC) • Low Crss (Typ. 9 pF) • 100% Avalanche Tested • Improved dv/dt C	Fairchild Semiconductor
FDD6N50TM_F085	500V N-Channel MOSFET FDD6N50TM_F085 500V N-Channel MOSFET FDD6N50TM_F085 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualif	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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