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Datasheet FDG361N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | FDG361N | N-Channel 100V Specified PowerTrenchMOSFET FDG361N
August 2001
FDG361N
N-Channel 100V Specified PowerTrenchMOSFET
General Description
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate |
Fairchild Semiconductor |
FDG3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
FDG330P | P-Channel 1.8V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
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FDG312P | P-Channel 2.5V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
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FDG326P | P-Channel 1.8V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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