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Datasheet FDG6321 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDG6321 | Dual N & P Channel Digital FET November 1998
FDG6321C Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize |
 Fairchild Semiconductor |
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| 1 | FDG6321C | Dual N & P Channel Digital FET November 1998
FDG6321C Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize |
Fairchild Semiconductor |
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