Datasheet FDMS86263P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDMS86263P	MOSFET ( Transistor ) FDMS86263P P-Channel PowerTrench® MOSFET FDMS86263P P-Channel PowerTrench® MOSFET -150 V, -22 A, 53 mΩ Features Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg	Fairchild Semiconductor

FDMS862 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDMS86263P	MOSFET ( Transistor ) FDMS86263P P-Channel PowerTrench® MOSFET FDMS86263P P-Channel PowerTrench® MOSFET -150 V, -22 A, 53 mΩ Features Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology	Fairchild Semiconductor
FDMS86200	N-Channel MOSFET FDMS86200 N-Channel Power Trench® MOSFET November 2012 FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ Features Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A Advanced Package and Silicon combination for low	Fairchild Semiconductor
FDMS86252	N-Channel MOSFET FDMS86252 N-Channel PowerTrench® MOSFET August 2010 FDMS86252 N-Channel PowerTrench® MOSFET 150 V, 16 A, 51 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored t	Fairchild Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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