Datasheet FDN537N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDN537N	Single N-Channel Power Trench MOSFET FDN537N Single N-Channel Power Trench® MOSFET FDN537N Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ January 2013 Features General Description Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology	Fairchild Semiconductor

FDN5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDN5630	60V N-Channel PowerTrench MOSFET FDN5630 March 2000 FDN5630 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features	Fairchild Semiconductor
FDN5618P	60V P-Channel Logic Level PowerTrench MOSFET FDN5618P July 2000 PRELIMINARY FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –1.25 A, –60 V.	Fairchild Semiconductor
FDN5618	60V P-Channel Logic Level PowerTrench MOSFET FDN5618P July 2000 PRELIMINARY FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –1.25 A, –60 V.	Fairchild Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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