|
|
Datasheet FDS4435 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FDS4435 | P-Channel PowerTrench MOSFET FDS4435
October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage rati | Fairchild Semiconductor | mosfet |
2 | FDS4435A | P-Channel Logic Level PowerTrenchMOSFET FDS4435A
October 2001
FDS4435A
P-Channel Logic Level PowerTrench® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate | Fairchild Semiconductor | mosfet |
3 | FDS4435BZ | P-Channel PowerTrench MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV | Fairchild Semiconductor | mosfet |
4 | FDS4435BZ_F085 | P-Channel PowerTrench MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET
FDS4435BZ_F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level | Fairchild Semiconductor | mosfet |
FDS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FDS100BA60 | DIODE MODULE
DIODE MODULE
F.R.D.
FRD/FDS100BA60
UL;E76102 M FRD FDS 100BA is a high speed dual diode module designed for high power switching application. FRD FDS 100BA is suitable for high frequency application requiring low loss and high speed control. High Speed trr 100ns IF AV 100A eac SanRex Corporation diode | | |
2 | FDS100CA100 | (FDS100CA100 / FDS100CA120) DIODE MODULE
DIODE MODULE
F.R.D.
FDS100CA100/120
UL;E76102 M FDS100CA is a high speed (fast recovery) diode module designed for high power switching application. FDS100CA is suitable for high frequency application requiring low loss and high speed control. High Speed trr 300ns IF AV 100A e SanRex Corporation diode | | |
3 | FDS100CA120 | (FDS100CA100 / FDS100CA120) DIODE MODULE
DIODE MODULE
F.R.D.
FDS100CA100/120
UL;E76102 M FDS100CA is a high speed (fast recovery) diode module designed for high power switching application. FDS100CA is suitable for high frequency application requiring low loss and high speed control. High Speed trr 300ns IF AV 100A e SanRex Corporation diode | | |
4 | FDS2070N3 | 150V N-Channel PowerTrench MOSFET FDS2070N3
May 2003
FDS2070N3
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side Fairchild Semiconductor mosfet | | |
5 | FDS2070N7 | 150V N-Channel PowerTrench MOSFET FDS2070N7
May 2003
FDS2070N7
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side Fairchild Semiconductor mosfet | | |
6 | FDS2170N3 | 200V N-Channel PowerTrench MOSFET FDS2170N3
May 2003
FDS2170N3
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side Fairchild Semiconductor mosfet | | |
7 | FDS2170N7 | 200V N-Channel PowerTrench MOSFET FDS2170N7
May 2003
FDS2170N7
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side Fairchild Semiconductor mosfet | |
Esta página es del resultado de búsqueda del FDS4435. Si pulsa el resultado de búsqueda de FDS4435 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |