Datasheet FDS89161LZ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDS89161LZ	Dual N-Channel MOSFET FDS89161LZ Dual N-Channel PowerTrench® MOSFET June 2011 FDS89161LZ Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(	Fairchild Semiconductor

FDS8916 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDS89161LZ	Dual N-Channel MOSFET FDS89161LZ Dual N-Channel PowerTrench® MOSFET June 2011 FDS89161LZ Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology fo	Fairchild Semiconductor
FDS89161	Dual N-Channel MOSFET FDS89161 Dual N-Channel PowerTrench® MOSFET June 2011 FDS89161 Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extr	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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