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Datasheet FDT86113LZ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FDT86113LZ | MOSFET, Transistor FDT86113LZ N-Channel PowerTrench® MOSFET
March 2011
FDT86113LZ
N-Channel PowerTrench® MOSFET
100 V, 3.3 A, 100 m:
Features
General Description
Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extreme |  Fairchild Semiconductor | mosfet |
FDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FDT1600N10ALZ | MOSFET, Transistor FDT1600N10ALZ — N-Channel PowerTrench® MOSFET
FDT1600N10ALZ
N-Channel PowerTrench® MOSFET
100 V, 5.6 A, 160 mΩ
November 2013
Features
• RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ Fairchild Semiconductor mosfet | | |
| 2 | FDT3612 | 100V N-Channel PowerTrench MOSFET FDT3612
March 2001
FDT3612
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching Fairchild Semiconductor mosfet | | |
| 3 | FDT3N40 | MOSFET, Transistor FDT3N40 N-Channel UniFETTM MOSFET
FDT3N40
N-Channel UniFETTM MOSFET
400 V, 2.0 A, 3.4 Features
• RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested
Applications
• LCD/LED TV • Lighting • Uninterruptible Po Fairchild Semiconductor mosfet | | |
| 4 | FDT434P | P-Channel 2.5V Specified PowerTrench MOSFET FDT434P
January 2000
FDT434P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low Fairchild Semiconductor mosfet | | |
| 5 | FDT439N | N-Channel 2.5V Specified EnhancementMode Field Effect Transistor FDT439N
June 1999
FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is esp Fairchild Semiconductor transistor | | |
| 6 | FDT457N | N-Channel Enhancement Mode Field Effect Transistor August 1998
FDT457N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz Fairchild Semiconductor transistor | | |
| 7 | FDT458P | 30V P-Channel PowerTrench MOSFET FDT458P
June 2001
FDT458P
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs featur Fairchild Semiconductor mosfet | |
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