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Datasheet FKV550N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FKV550N | N-channel Trench Power MOSFET FKV550N
FKV550N
3.3
10.0
2.8
4.2
C 0.5
16.9 8.4 0.8 4.0
2.6
1.35 3.9 1.35 0.85
2.54
2.54
0.45
2.4
2.2
FKV550N
–
–
–
–
–
–
–
–
–
|  Sanken | mosfet |
FKV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FKV460 | MOS FET MOS FET FKV460 (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 40 +20, –10 ± 60 ± 180 Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD  Sanken electric data | | |
| 2 | FKV460FP | MOS FET MOS FET FKV460FP (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 40 ± 20 ± 60 ± 180 Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Tes Sanken electric data | | |
| 3 | FKV550N | N-channel Trench Power MOSFET FKV550N
FKV550N
3.3
10.0
2.8
4.2
C 0.5
16.9 8.4 0.8 4.0
2.6
1.35 3.9 1.35 0.85
2.54
2.54
0.45
2.4
2.2
FKV550N
–
–
–
–
–
–
–
–
–
Sanken mosfet | | |
| 4 | FKV550T | Power MOSFETs FKV550T
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 50 ± 20 ± 50 ± 150 35 (Tc = 25ºC) 150 50 150 –55 to +150
(Ta = 25ºC)
External dimensions 1 ...... FM20
Electrical Characteristics
Symbol V (BR)DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss Cr Sanken mosfet | | |
| 5 | FKV560 | MOS FET MOS FET FKV560 (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg Ratings 50 ± 20 ± 60 ± 180 40 (Tc=25ºC) 150 –55 to +150 Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on Sanken electric data | | |
| 6 | FKV560FP | MOSFET, Transistor MOS FET FKV560FP (under development)
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) * PD Tch Tstg * PW Ratings 50 ± 20 ± 60 ± 180
VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48Ω VGS = 10V ISD = 50A, VGS = 0V
(16.2)
70 (Tc=25ºC) 150 –55 to +150 100µs, duty 1%
(Ta=25º Sanken electric mosfet | | |
| 7 | FKV560S | MOSFET, Transistor MOS FET FKV560S (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol Ratings VDSS 50 ± 20 VGSS ± 45 ID ± 135 ID (pulse)* PD 60 (Tc=25ºC) Tch 150 Tstg –55 to +150 * PW 100µs, duty 1% Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Sanken electric mosfet | |
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