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Datasheet FLM5964-8F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | FLM5964-8F | C-Band Internally Matched FET w
m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 39.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 28.5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • |
Eudyna Devices |
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3 | FLM5964-8F | C-Band Internally Matched FET w
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Fujitsu |
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2 | FLM5964-8F | C-Band Internally Matched FET FLM5964-8F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DE |
SUMITOMO |
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1 | FLM5964-8F-001 | C-Band Internally Matched FET FLM5964-8F/001
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB=39.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.) • Broad Band: 5.85 to 6.75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-8F/001 is a powe |
SUMITOMO |
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Número de pieza | Descripción | Fabricantes | |
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