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Datasheet FMV13N60ES Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FMV13N60ES | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
FMV13N60ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalan |  Fuji Electric | mosfet |
FMV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FMV-3FU | Damper Diode (Diode modulation for TV) Damper Diode (Diode modulation for TV)
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (H) IR (µA) (µA) VR = VRM VR = VRM max Ta =100°C max
Others
Tj (°C)
t  Sanken electric diode | | |
| 2 | FMV-3GU | Damper Diode (Diode modulation for TV) Damper Diode (Diode modulation for TV)
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (H) IR (µA) (µA) VR = VRM VR = VRM max Ta =100°C max
Others
Tj (°C)
t Sanken electric diode | | |
| 3 | FMV-G5FS | Damper Diodes (For TV) Damper Diodes (For TV)
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Tj (°C)
Tstg (°C)
VF (V) max IF (A)
IR IR (H) (µA) (µA) VR = VRM VR = VRM max Ta =100°C max
Electrical Characteristics (Ta = 25°C) t rr t rr (µs) (� Sanken electric diode | | |
| 4 | FMV03N60E | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
FMV03N60E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanch Fuji Electric mosfet | | |
| 5 | FMV05N50E | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
FMV05N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanch Fuji Electric mosfet | | |
| 6 | FMV05N60E | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
FMV05N60E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanch Fuji Electric mosfet | | |
| 7 | FMV06N60E | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
FMV06N60E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanch Fuji Electric mosfet | |
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