Datasheet FQA24N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQA24N60	600V N-Channel MOSFET FQA24N60 April 2000 QFET FQA24N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resis	Fairchild Semiconductor

FQA24 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQA24N50	500V N-Channel MOSFET FQA24N50 — N-Channel QFET® MOSFET June 2014 FQA24N50 N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 55 pF) • 100% Avalanche Tested • RoHS complian	Fairchild Semiconductor
FQA24N50F	500V N-Channel MOSFET FQA24N50F September 2001 FRFET FQA24N50F 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored	Fairchild Semiconductor
FQA24N60	600V N-Channel MOSFET FQA24N60 April 2000 QFET FQA24N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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