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Datasheet FQA9N90C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FQA9N90C | 900V N-Channel MOSFET FQA9N90C
QFET
FQA9N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi |  Fairchild Semiconductor | mosfet |
| 2 | FQA9N90C_F109 | MOSFET, Transistor FQA9N90C_F109 — N-Channel QFET® MOSFET
FQA9N90C_F109
N-Channel QFET® MOSFET
900 V, 9 A, 1.4 Ω Features
• 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss . 14 pF)
• 100% Avalanche Tested
• RoHS compliant
April 2014
Description
| Fairchild Semiconductor | mosfet |
FQA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FQA10N80 | 800V N-Channel MOSFET FQA10N80
September 2000
QFET
FQA10N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r Fairchild Semiconductor mosfet | | |
| 2 | FQA10N80C | 800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET
September 2006
QFET
FQA10N80C
800V N-Channel MOSFET
Features
• • • • • • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability
®
Description
The Fairchild Semiconductor mosfet | | |
| 3 | FQA10N80C_F109 | N-Channel QFET MOSFET FQA10N80C_F109 — N-Channel QFET® MOSFET
FQA10N80C_F109
N-Channel QFET® MOSFET
800 V, 10 A, 1.1 Ω
Features
• 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS compliant
March 2014
Descript Fairchild Semiconductor mosfet | | |
| 4 | FQA11N40 | 400V N-Channel MOSFET
QFET
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Fairchild Semiconductor mosfet | | |
| 5 | FQA11N90 | 900V N-Channel MOSFET FQA11N90
September 2000
QFET
FQA11N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r Fairchild Semiconductor mosfet | | |
| 6 | FQA11N90C | 900V N-Channel MOSFET FQA11N90C 900V N-Channel MOSFET
September 2006
QFET
FQA11N90C
900V N-Channel MOSFET
Features
• • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability
®
Description
The Fairchild Semiconductor mosfet | | |
| 7 | FQA11N90C_F109 | MOSFET, Transistor FQA11N90C_F109 — N-Channel QFET® MOSFET
FQA11N90C_F109
N-Channel QFET® MOSFET
900 V, 11.0 A, 1.1 Ω
Features
• 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • RoHS compliant
April 2014
Desc Fairchild Semiconductor mosfet | |
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