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Datasheet FQD2N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FQD2N60 | 600V N-Channel MOSFET FQD2N60 / FQU2N60
April 2000
QFET
FQD2N60 / FQU2N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim |
 Fairchild Semiconductor |
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| 1 | FQD2N60C | 600V N-Channel MOSFET FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
April 2013
FQD2N60C / FQU2N60C
600 V, 1.9 A, 4.7 Ω Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested • RoHS Compliant
N-Channel QFET® |
Fairchild Semiconductor |
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