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Datasheet FQT4N20 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FQT4N20 | 200V N-Channel MOSFET FQT4N20
May 2001
QFET
FQT4N20
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistanc |  Fairchild Semiconductor | mosfet |
| 2 | FQT4N20L | 200V LOGIC N-Channel MOSFET FQT4N20L
May 2001
QFET
FQT4N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r | Fairchild Semiconductor | mosfet |
FQT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FQT13N06 | 60V N-Channel MOSFET FQT13N06
January 2002
QFET
FQT13N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resi Fairchild Semiconductor mosfet | | |
| 2 | FQT13N06L | 60V LOGIC N-Channel MOSFET FQT13N06L
May 2001
QFET
FQT13N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state Fairchild Semiconductor mosfet | | |
| 3 | FQT1N60C | N-Channel QFET MOSFET FQT1N60C N-Channel MOSFET
FQT1N60C
600V, 0.2 A, 11.5 Ω Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance Fairchild Semiconductor mosfet | | |
| 4 | FQT1N80 | N-Channel MOSFET FQT1N80 N-Channel MOSFET
November 2007
QFET
FQT1N80
N-Channel MOSFET
800V, 0.2A, 20Ω Features
• RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A • Low gate charge ( Typ. 5.5nC) • Low Crss ( Typ. 2.7pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compli Fairchild Semiconductor mosfet | | |
| 5 | FQT1N80TF | N-Channel MOSFET FQT1N80TF_WS N-Channel MOSFET
August 2011
QFET
FQT1N80TF_WS
N-Channel MOSFET
800V, 0.2A, 20Ω Features
• RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A • Low gate charge ( Typ. 5.5nC) • Low Crss ( Typ. 2.7pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoH Fairchild Semiconductor mosfet | | |
| 6 | FQT2P25 | 250V P-Channel MOSFET FQT2P25
May 2001
QFET
FQT2P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistanc Fairchild Semiconductor mosfet | | |
| 7 | FQT3P20 | 200V P-Channel MOSFET FQT3P20
May 2001
QFET
FQT3P20
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistanc Fairchild Semiconductor mosfet | |
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