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Datasheet G40N60UFD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | G40N60UFD | FGA40N60UFD FGA40N60UFD
IGBT
FGA40N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a |  Fairchild Semiconductor | data |
G40 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G40 | Voltage-Controlled Attenuator Module %& '( )*+' ,(- .-/*+0( (10(22(+ & +3(- & .+ 2.33 4 ) 5 6, 7 8& 98 '6+*/& 0 -*+9( ) . /8:5 6, 7 *3 3% & 08& +9 4 ; < . = 5 6, 7 4 ; < . = 5 6, 7
" 9 !$ "> ? @!< " " $ "! !$ $ !@ # $ # ! " @" ? > " @! $ " #! # A ! ! ! !$ ! # ! ? ?! B $ ! > !@ ) " .C ! 3$ / $! # D @ " > ! /& 2C3 'C !A ! ! ! !@ A ?
!
 Tyco Electronics data | | |
| 2 | G4000EC450 | Anode Shorted Gate Turn-Off Thyristor WESTCODE
An IXYS Company
Date:- 27 Sep, 2004 Data Sheet Issue:- 1
Anode Shorted Gate Turn-Off Thyristor Type G4000EC450
Absolute Maximum Ratings
VDRM VDSM VRRM VDC-link
VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak re  IXYS thyristor | | |
| 3 | G400SD | SCHOTTKY BARRIER DIODE
CORPORATION
G400SD
Description Package Dimensions SOT-23
ISSUED DATE :2003/06/03 REVISED DATE :2006/05/24B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 5 A
The G400SD is high frequency rectification for switching power  GTM diode | | |
| 4 | G401SD | SCHOTTKY BARRIER DIODE
CORPORATION
G401SD
Description Package Dimensions SOT-23
ISSUED DATE :2003/06/03 REVISED DATE :2006/05/24B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 0 . 2 A
The G401SD is high frequency rectification for switching power GTM diode | | |
| 5 | G402SD | SCHOTTKY BARRIER DIODE
CORPORATION
G402SD
Description Package Dimensions SOT-23
ISSUED DATE :2003/06/03 REVISED DATE :2006/05/24B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 0 . 3 A
The G402SD is high frequency rectification for switching power GTM diode | | |
| 6 | G40H603 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGW40N60H3
600VIGBT Highspeedswitchingseriesthirdgeneration
DataSheet
IndustrialPowerControl
IGW40N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnolo  Infineon igbt | | |
| 7 | G40N120CE | TSG40N120CE TO-264
Pin Definition: 1. Gate 2. Collector 3. Emitter
TSG40N120CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
VCES (V)
VGES (V)
1200
±20
IC (A)
40
General Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction an  Taiwan Semiconductor data | |
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