Datasheet G4BC30FD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	G4BC30FD	IRG4BC30FD PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher e	International Rectifier

G4BC3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
G4BC30KD	IRG4BC30KD PD -91595A IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • t	International Rectifier
G4BC30UD	IRG4BC30UD PD 91453B IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution a	International Rectifier
G4BC30FD	IRG4BC30FD PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distr	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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