| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | GKI03080 | N Channel Trench Power MOSFET 30 V, 26 A, 6.9 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI03080 Features V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------8.5 mΩ max. (VGS = 10 V, ID = 25.0 A) Qg------- 7.1 nC (VGS = 4.5 V, VDS = 15 V, ID = 31.5 A) Low Total Gate Charge High Speed Swit |
 SANKEN |
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Recommended search results related to GKI03080 |
| Part No | Description ( Function) | Manufacturers | |
| GKI03026 | N Channel Trench Power MOSFET 30 V, 40 A, 2.2 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI03026 Features V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------3.0 mΩ max. (VGS = 10 V, ID = 68.0 A) Q |
SANKEN |
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| GKI03039 | N Channel Trench Power MOSFET 30 V, 26 A, 3.2 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI03039 Features V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------4.0 mΩ max. (VGS = 10 V, ID = 47.2 A) Q |
SANKEN |
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| GKI03061 | N Channel Trench Power MOSFET 30 V, 26 A, 5.2 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI03061 Features V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------6.5 mΩ max. (VGS = 10 V, ID = 31.0 A) Q |
SANKEN |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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