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Datasheet GKI04031 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GKI04031 | N Channel Trench Power MOSFET 40 V, 40 A, 2.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
GKI04031
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 51.0 A) Qg------26.4 nC (VGS |  SANKEN | mosfet |
GKI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GKI03026 | N Channel Trench Power MOSFET 30 V, 40 A, 2.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
GKI03026
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------3.0 mΩ max. (VGS = 10 V, ID = 68.0 A) Qg------25.8 nC (VGS SANKEN mosfet | | |
| 2 | GKI03039 | N Channel Trench Power MOSFET 30 V, 26 A, 3.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
GKI03039
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------4.0 mΩ max. (VGS = 10 V, ID = 47.2 A) Qg------16.5 nC (VGS SANKEN mosfet | | |
| 3 | GKI03061 | N Channel Trench Power MOSFET 30 V, 26 A, 5.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
GKI03061
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------6.5 mΩ max. (VGS = 10 V, ID = 31.0 A) Qg------- 9.3 nC (VGS SANKEN mosfet | | |
| 4 | GKI03080 | N Channel Trench Power MOSFET 30 V, 26 A, 6.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
GKI03080
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------8.5 mΩ max. (VGS = 10 V, ID = 25.0 A) Qg------- 7.1 nC (VGS SANKEN mosfet | | |
| 5 | GKI04031 | N Channel Trench Power MOSFET 40 V, 40 A, 2.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
GKI04031
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 51.0 A) Qg------26.4 nC (VGS SANKEN mosfet | | |
| 6 | GKI04048 | N Channel Trench Power MOSFET 40 V, 26 A, 4.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
GKI04048
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------5.4 mΩ max. (VGS = 10 V, ID = 35.4 A) Qg------16.0 nC (VGS SANKEN mosfet | | |
| 7 | GKI04076 | N Channel Trench Power MOSFET 40 V, 26 A, 6.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
GKI04076
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A) Qg------- 7.9 nC (VGS SANKEN mosfet | |
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