|
|
Datasheet GTVA221701FA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | GTVA221701FA | Thermally-Enhanced High Power RF GaN HEMT advance specification
GTVA221701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz
Description
The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It feat |
 Infineon |
 |
GTVA22170 Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| GTVA221701FA | Thermally-Enhanced High Power RF GaN HEMT |
Infineon |
|
| Esta página es del resultado de búsqueda del GTVA221701FA. Si pulsa el resultado de búsqueda de GTVA221701FA se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |