Datasheet H7P1002DS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H7P1002DS	Silicon P Channel MOS FET High Speed Power Switching H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS(on) = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0	Renesas Technology

H7P100 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H7P1002DS	Silicon P Channel MOS FET High Speed Power Switching H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS(on) = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline RENESAS	Renesas Technology
H7P1002DL	Silicon P Channel MOS FET High Speed Power Switching H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS(on) = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline RENESAS	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
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