Datasheet HAT2279N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HAT2279N	Silicon N Channel Power MOS FET Power Switching HAT2279N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.2.00 Jul.05.2005 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.8 mΩ typ. (at VGS = 10 V) • Lead Fre	Renesas Technology

HAT22 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HAT2215R	Silicon N Channel Power MOS FET High Speed Power Switching HAT2215R, HAT2215RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G0486-0300 Rev.3.00 Dec.22.2004 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting Outline SOP-8 7 8 D D 5 6 D D 8 2 G 4 G 3 1 2 5 7 6	Renesas Technology
HAT2240C	Silicon N Channel MOS FET Power Switching HAT2240C Silicon N Channel MOS FET Power Switching REJ03G1241-0400 Rev.4.00 Apr 05, 2006 Features • Low on-resistance RDS(on) = 75 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Packag	Renesas Technology
HAT2215RJ	Silicon N Channel Power MOS FET High Speed Power Switching HAT2215R, HAT2215RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G0486-0300 Rev.3.00 Dec.22.2004 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting Outline SOP-8 7 8 D D 5 6 D D 8 2 G 4 G 3 1 2 5 7 6	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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