Datasheet HAT2287WP Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HAT2287WP	Silicon N Channel Power MOS FET Power Switching HAT2287WP Silicon N Channel Power MOS FET Power Switching REJ03G1470-0100 Rev.1.00 Sep 06, 2006 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1	Renesas Technology

HAT228 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HAT2281C	Silicon N Channel MOS FET Power Switching HAT2281C Silicon N Channel MOS FET Power Switching REJ03G1328-0200 Rev.2.00 Jan 26, 2006 Features • Low on-resistance RDS(on) = 109 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Packa	Renesas Technology
HAT2285WP	Silicon N Channel Power MOS FET HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1371-0300 Rev.3.00 Apr 05, 2006 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diod	Renesas Technology
HAT2287WP	Silicon N Channel Power MOS FET Power Switching HAT2287WP Silicon N Channel Power MOS FET Power Switching REJ03G1470-0100 Rev.1.00 Sep 06, 2006 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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