Datasheet HAT3008RJ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HAT3008RJ	Silicon N/P Channel Power MOS FET High Speed Power Switching HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-536B (Z) 3rd. Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 3 1 2	Hitachi Semiconductor

HAT300 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HAT3004R	Silicon N-Channel / P-Channel Power MOSFET w Features w w • Low on-resistance HAT3004R m o c . Silicon N Channel U / P Channel Power MOS FET 4 High t Speed Power Switching e e h S a ADE-208-500I (Z) at 10th. Edition D Aug. 1997 . • Capable of 4 V gate drive • Low drive current • High density mounting Outline S	Hitachi
HAT3008RJ	Silicon N/P Channel Power MOS FET High Speed Power Switching HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-536B (Z) 3rd. Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP	Hitachi Semiconductor
HAT3008R	Silicon N/P Channel Power MOS FET High Speed Power Switching HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-536B (Z) 3rd. Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP	Hitachi Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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