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Datasheet HFP730 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | HFP730 | N-Channel Enhancement Mode Field Effect Transistor
Shantou Huashan Electronic Devices Co.,Ltd.
HFP730
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay |
 Shantou Huashan Electronic |
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| 4 | HFP730 | 400V N-Channel MOSFET HFP730
June 2005
HFP730
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ ȍ ID = 5.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Char |
 SemiHow |
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| 3 | HFP730F | N-Channel MOSFET HFP730F_HFS730F
Dec 2016
HFP730F / HFS730F
400V N-Channel MOSFET
Features
Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant
HFP730F TO-220
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 400 |
SemiHow |
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| 2 | HFP730S | N-Channel MOSFET HFP730S
Nov 2013
HFP730S
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ ȍ ID = 6.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Ch |
SemiHow |
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