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Datasheet HGTP3N60C3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | HGTP3N60C3 | 6A/ 600V/ UFS Series N-Channel IGBTs HGTD3N60C3S, HGTP3N60C3
Data Sheet January 2000 File Number 4139.5
6A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MO |
Intersil Corporation |
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3 | HGTP3N60C3D | 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
• 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typic |
Fairchild Semiconductor |
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2 | HGTP3N60C3D | 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTP3N60C3D, HGT1S3N60C3DS
Data Sheet January 2000 File Number 4140.2
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices |
Intersil Corporation |
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1 | HGTP3N60C3D | UFS Series N-Channel IGBT S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
• 6A, 600V at TC = 25oC • 600V Switching SOA |
Harris Corporation |
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Número de pieza | Descripción | Fabricantes | |
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