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HGTP7N60C3 PDF Datasheet

The HGTP7N60C3 is 14a/ 600V/ Ufs Series N-channel Igbts. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
4 HGTP7N60C3
14A/ 600V/ UFS Series N-Channel IGBTs

S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE January 1997 Features • 14A, 600V at TC = 25oC • • • • 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss COLLECTOR (FLANGE) Descri

Fairchild Semiconductor
Fairchild Semiconductor
pdf
3 HGTP7N60C3
14A/ 600V/ UFS Series N-Channel IGBTs

HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 File Number 4141.3 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o

Intersil Corporation
Intersil Corporation
pdf
2 HGTP7N60C3D
14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

S E M I C O N D U C T O R HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) January 1997 Features • 14A, 600V at TC = 25oC • • • • • 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC Short

Fairchild Semiconductor
Fairchild Semiconductor
pdf
1 HGTP7N60C3D
14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTP7N60C3D, HGT1S7N60C3DS Data Sheet January 2000 File Number 4150.2 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss

Intersil Corporation
Intersil Corporation
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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