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Datasheet HN7G07FU Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HN7G07FU | Power Management Switch Applications HN7G07FU
TOSHIBA Multichip Discrete Device
HN7G07FU
Unit: mm
Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
• Combining transistor and BRT reduces the parts count, enabling the design of more |  Toshiba Semiconductor | data |
HN7 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HN7G01FE | Power Management Switch Applications HN7G01FE
TOSHIBA Multichip Discrete Device
HN7G01FE
Unit: mm
Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications
• • Q1 (transistor): 2SA1955 equivalent Q2 (MOSFET): SSM3K03FE equivalent
Q1 (Transistor) Absolute Maximum Ratings ( Toshiba Semiconductor data | | |
| 2 | HN7G01FU | Power Management Switch Application HN7G01FU
Preliminary
TOSHIBA Multi Chip Discrete Device
HN7G01FU
Unit: mm
Power Management Switch Application Driver Circuit Application Interface Circuit Application
• • Q1 (transistor): 2SA1955 equivalent Q2 (MOS-FET): 2SK1830 equivalent
Q1 (transistor) Absolute Maximu Toshiba Semiconductor data | | |
| 3 | HN7G02FE | Power Management Switch Applications HN7G02FE
TOSHIBA Multichip Discrete Device
HN7G02FE
Unit: mm
Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
Q1 (transistor): RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent
Q1 (Transistor) Toshiba Semiconductor data | | |
| 4 | HN7G02FU | Power Management Switch Application HN7G02FU
TOSHIBA Multi Chip Discrete Device
HN7G02FU
Unit: mm
Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent
Q1 (Transistor) Ab Toshiba Semiconductor data | | |
| 5 | HN7G03FU | Power Management Switch Applications HN7G03FU
TOSHIBA Multichip Discrete Device
HN7G03FU
Unit: mm
Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications
Q1 (transistor) Q2 (S-MOS)
: 2SA1955 equivalent : SSM3K04FU equivalent
Q1 Absolute Maximum Ratings (Ta = 25°C)
Charac Toshiba Semiconductor data | | |
| 6 | HN7G04FU | General-Purpose Amplifier Applications HN7G04FU
TOSHIBA Multichip Discrete Device
HN7G04FU
Unit: mm
General-Purpose Amplifier Applications Driver Circuit Applications Switching and Muting Switch Applications
Q1: 2SA1954 equivalent Q2: RN1307 equivalent
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collec Toshiba Semiconductor amplifier | | |
| 7 | HN7G05FU | Power Management Switch Applications HN7G05FU
TOSHIBA Multichip Discrete Device
HN7G05FU
Unit: mm
Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
Q1 (transistor): RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent
Q1 (Transistor) Toshiba Semiconductor data | |
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