| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | HN7G08FE | General-Purpose Amplifier Applications HN7G08FE TOSHIBA Multichip Discrete Device HN7G08FE Unit: mm General-Purpose Amplifier Applications Switching and Muting Switch Applications Q1 Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA Large collector current: IC = −400 mA (max) Q1: 2SA1955F Q2: RN1106F Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic |
 Toshiba Semiconductor |
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List of most widely used semiconductors
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