Datasheet HVV1011-300 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HVV1011-300	Power Transistor The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ru	HVVi

HVV1011- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HVV1011-300	Power Transistor The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power	HVVi
HVV1011-035	Power Transistor HVV1011-040 ThePinnovativereSTehmiTecihToenThninehdnoieuvnnicaontntvioonvarvoteiavCtviaSoetvieemvSmpeieSaceSmnoiemycni!mocdionucndcotdunocurdtcutoCrcotorComrCopoCammonppyam!anpnya!y!ny!liminary The innovative SemiconducHLtL1o-VBH0HLr-B3C-VaVVB0ano1V-nVadm21dn111R0pd00A49aa11-A0	HVVi
HVV1011-035	RF transistor DESCRIPTION The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz. PACKAGE FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MA	ASI

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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