Datasheet HVV1214-075 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HVV1214-075	RF Transistor TheTihnenTTiohhnveenaitioinnvvnanetoiovSvvaeeatitmiiSvvceeeomSinSecdeoumimcnitcdcoouroncntdCdouoruccmttCpooorarnmCyCp!ooamnmypp!aannyy!!Preliminary HVVH1V2V141-201745-075 The innovative SemiconduL1HLc2--tBV0Boa0L1rVan-2-Cn11Bd0od42a0mR01Rn-014apad4-dadM0R0ana70rayHr5!dPPMza,uurH2llssP0zee0,uddµ2ls	HVVi

HVV1214- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HVV1214-100	Power Transistor The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Ga	HVVi
HVV1214-075	RF Transistor TheTihnenTTiohhnveenaitioinnvvnanetoiovSvvaeeatitmiiSvvceeeomSinSecdeoumimcnitcdcoouroncntdCdouoruccmttCpooorarnmCyCp!ooamnmypp!aannyy!!Preliminary HVVH1V2V141-201745-075 The innovative SemiconduL1HLc2--tBV0Boa0L1rVan-2-Cn11Bd0od42a0mR01Rn-014apad4-dadM0R0ana70rayHr5!dPPMza,uurH	HVVi
HVV1214-025S	RF Transistor HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! DESCRIPTION The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications oper	HVVi

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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