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Datasheet IPZ60R125P6 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IPZ60R125P6 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor IPZ60R125P6
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
600VCoolMOS™P6PowerTransistor
IPZ60R125P6
1Description
CoolMOS™isarevolutionarytechnologyforhighvolta |  Infineon | mosfet |
IPZ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IPZ40N04S5-5R4 | Power-Transistor IPZ40N04S5-5R4
OptiMOS™-5 Power-Transistor
Product Summary
Features • OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 5.4 mW 40 A
PG-TSDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified • MSL1 up to 260°C peak reflow
1
• 175� Infineon transistor | | |
| 2 | IPZ40N04S5-8R4 | Power-Transistor IPZ40N04S5-8R4
OptiMOS™-5 Power-Transistor
Product Summary
Features • OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 8.4 mW 40 A
PG-TSDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified • MSL1 up to 260°C peak reflow
1
• 175� Infineon transistor | | |
| 3 | IPZ40N04S5L-2R8 | Power-Transistor IPZ40N04S5L-2R8
OptiMOS™-5 Power-Transistor
Product Summary
Features • OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 2.8 mW 40 A
PG-TSDSON-8
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified • MSL1 up to 260°C peak reflow
1
• 175� Infineon transistor | | |
| 4 | IPZ40N04S5L-4R8 | Power-Transistor IPZ40N04S5L-4R8
OptiMOS™-5 Power-Transistor
Product Summary
Features • OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 4.8 mW 40 A
PG-TSDSON-8
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified • MSL1 up to 260°C peak reflow
1
• 175� Infineon transistor | | |
| 5 | IPZ60R017C7 | MOSFET, Transistor IPZ60R017C7
MOSFET
600VCoolMOSªC7PowerTransistor
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFET Infineon mosfet | | |
| 6 | IPZ60R040C7 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
600VCoolMOS™C7PowerTransistor IPZ60R040C7
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
600VCoolMOS™C7PowerTransistor
IPZ60R040C7
1Description
CoolMOS™C7isarevolutionarytechnologyforhighvo Infineon mosfet | | |
| 7 | IPZ60R041P6 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor IPZ60R041P6
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
600VCoolMOS™P6PowerTransistor
IPZ60R041P6
1Description
CoolMOS™isarevolutionarytechnologyforhighvolta Infineon mosfet | |
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