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Datasheet IRF2807 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | IRF2807 | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit |
 International Rectifier |
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| 8 | IRF2807L | HEXFET Power MOSFET PD - 94170
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
IRF2807S IRF2807L
VDSS = 75V RDS(on) = 13mΩ
G S
ID = 82A
Advanced HEXFET® Power MOSFETs fro |
International Rectifier |
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| 7 | IRF2807LPbF | HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRF2807SPbF IRF2807LPbF
D
PD - 95945
HEXFET® Power MOSFET VDSS = 75V RDS(on) = 13mΩ
S
G
The D2Pa |
International Rectifier |
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| 6 | IRF2807PbF | HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely |
International Rectifier |
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