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Datasheet IRF840A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | IRF840A | Power MOSFET ( Transistor ) Power MOSFET
IRF840A, SiHF840A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
38 9.0 18 Single
0.85
TO-220AB
D
S D G
G
S N-Channel MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive Requirement
Available
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 Vishay |
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| 11 | IRF840A | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.)
Absolute Maximum Ratings
Sym |
 Fairchild Semiconductor |
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| 10 | IRF840A | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
IRF840 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (8A, 500Volts)
DESCRIPTION
The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the brea |
 nELL |
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| 9 | IRF840A | Power MOSFET ( Transistor ) IRF840A
Power MOSFET
VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
Drain
D
Gate Drain Source
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage Drain to Source Leakage Current
Gate |
 TRANSYS |
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