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Datasheet IRFP9140 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | IRFP9140 | P-Channel Power MOSFET IRFP9140
Data Sheet July 1999 File Number
2292.4
19A, 100V, 0.200 Ohm, P-Channel Power MOSFET
This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate pow |
INTERSIL |
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4 | IRFP9140 | (IRF9140 - IRF9143) P-Channel Power MOSFETs |
Samsung Electronics |
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3 | IRFP9140 | Power MOSFET ( Transistor ) Power MOSFET
IRFP9140, SiHFP9140
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
- 100 VGS = - 10 V
61
Qgs (nC)
14
Qgd (nC)
29
Configuration
Single
0.20
S
TO-247AC
G
S
D G
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic |
Vishay |
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2 | IRFP9140N | Power MOSFET ( Transistor ) PD - 9.1492A
PRELIMINARY
l l l l l l
IRFP9140N
HEXFET® Power MOSFET
D
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated
VDSS = -100V RDS(on) = 0.117Ω
G S
ID = -23A
Description
Fifth Generation HEXFETs from Internati |
IRF |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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