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Datasheet IRFW450 Equivalent ( PDF )

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1 IRFW450   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFW450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω (Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mo
 Inchange Semiconductor
Inchange Semiconductor		 datasheet IRFW450 pdf

IRFW Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFW540A

Advanced Power MOSFET

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V IRF
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
IRFW644B

N-Channel MOSFET

IRFW644B / IRFI644B November 2001 IRFW644B / IRFI644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially ta
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
IRFW630A

Power MOSFET ( Transistor )

     )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUH
 Samsung
Samsung		 datasheet pdf - Samsung


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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