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Datasheet IRFWZ24A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRFWZ24A   Power MOSFET ( Transistor )

Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.) Absolute Ma
 Samsung
Samsung		 datasheet IRFWZ24A pdf

IRFWZ Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFWZ44A

Power MOSFET ( Transistor )

     )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýýìæèýý2SHUDWLQJýý7
 Samsung
Samsung		 datasheet pdf - Samsung
IRFWZ44

Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 IRFWZ44 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V �
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
IRFWZ34A

Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 IRFW/IZ34A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V
Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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