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Datasheet IRFZ34 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 26 | IRFZ34 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ. |
 Fairchild Semiconductor |
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| 25 | IRFZ34 | (IRFZ30 / IRFZ34) N-Channel Power MOSFET |
 Samsung Electronics |
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| 24 | IRFZ34 | Power MOSFET ( Transistor ) |
 International Rectifier |
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| 23 | IRFZ34 | (IRFZ34 / IRFZ35) N-Channel Transistors |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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